Priv.-Doz.Dr. Rudolf Brüggemann

Halbleiterphysik, Strahlungswandlung

» Pressemitteilungen mit Nennung der Person

Institut für Physik

Carl von Ossietzky Universität Oldenburg
Postfach 2503
26111 Oldenburg

Raum: W02 3-327b (» Adresse und Lageplan) Sprechzeiten: Mo 13 - 14 Uhr, Carl-von-Ossietzky-Str. 9 - 11 Tel.: 798-3497 Fax: +49-441-798-3699

Aktuelle Lehrveranstaltungen

Wintersemester 2016/2017


Publikationen

D. Nesheva, N. Nedev und Z. Levi - Absorption and transport properties of Si rich oxide layers annealed at various temperatures; , 2008 (OPAC)
Remy Chouffot, S. Ibrahim und Rudolf Brüggemann - Comparison of photoluminescence and capacitance spectroscopies as efficient tools for interface characterisation of heterojunction solar cells; , 2008 (OPAC)
N. Nedev, D. Nesheva und E. Manolov - MOS structures containing silicon nanoparticles for memory device applications; , 2008 (OPAC)
Nacera Souffi, Gottfried Heinrich Bauer und Charles Main - Density of states in the gap of microcrystalline silicon determined from thermally-stimulated currents; , 2008 (OPAC)
Rudolf Brüggemann, J. Behrends und Sebastian Meier - Luminescence, quasi-Fermi levels and applied voltage in ideal and real semiconductor structures; , 2007 (OPAC)
Charles Main, Z. Aneva und Steve Reynolds - Thermally-stimulated currents in thin-film semiconductors : computer modelling and experiment; , 2007 (OPAC)
N. Nedev, D. Nesheva und E. Manolov - Influence of thermal annealing on the memory effect in MIS structures containing crystalline SI nanoparticles; , 2007 (OPAC)
Rudolf Brüggemann, R. I. Badran und S. Xiong - Relation between the dark and photoelectronic properties of microcrystalline silicon; , 2007 (OPAC)
Rudolf Brüggemann und Maximilian Rösch - Simulation of amorphous silicon pin diodes and amorphous silicon : crystalline silicon heterodiode solar cells; , 2007 (OPAC)
N. Nedev, M. Stoytcheva und D. Nesheva - MOS structures containing amorphous silicon nanoparticles for application in memory devices; , 2007 (OPAC)
Rudolf Brüggemann - On the electric field, quasi-Fermi levels and applied voltage in solar cells; , 2007 (OPAC)
Rudolf Brüggemann und Gottfried Heinrich Bauer - Electro- and photoluminescence and applied voltage of solar cells; , 2007 (OPAC)
Pierre-Jean Ribeyron, A. Vandeneynde und J. Damon-Lacoste - Polymorphous/crystalline silicon heterojunction solar cells : optimisation on p-type monocrystalline silicon; , 2007 (OPAC)
Nacera Souffi, Gottfried Heinrich Bauer und Rudolf Brüggemann - Study of metastabilities in microcrystalline silicon films by photoconductivity techniques; , 2006 (OPAC)
Rudolf Brüggemann und Nacera Souffi - Metastable dark and photoconductive properties of microcrystalline silicon; , 2006 (OPAC)
Nacera Souffi, Gottfried Heinrich Bauer und Rudolf Brüggemann - Density-of-states in microcrystalline silicon from thermally-stimulated conductivity; , 2006 (OPAC)
Rudolf Brüggemann und Steve Reynolds - Modulated photoluminescence studies for lifetime determination in amorphous-silicon passivated crystalline-silicon wafers; , 2006 (OPAC)
Rudolf Brüggemann und Maximilian Rösch - Application of Sc-Simul : numerical simulation for thin-film silicon based devices; , 2005 (OPAC)
Rudolf Brüggemann - Mobility-lifetime products in microcrystalline silicon; , 2005 (OPAC)
Rudolf Brüggemann, Maximilian Rösch und Saioa Tardon - Application of SC-Simul for numerical modeling of the opto-electronic properties of heterojunction diodes; , 2005 (OPAC)
Gottfried Heinrich Bauer, Rudolf Brüggemann und Saioa Tardon - Quasi-Fermi level splitting and identification of recombination losses from room temperature luminescence in Cu(In 1-x Ga x)Se 2 thin films versus optical band gap; , 2005 (OPAC)
Levent Gütay, Rudolf Brüggemann und Gottfried Heinrich Bauer - Local inhomogeneities of the quality of the photo excited state and material composition in Cu(In, Ga)Se2-absorbers in the few micrometer scale by sub-micron resolved photoluminescence; , 2005 (OPAC)
Sebastian Meier, Rudolf Brüggemann und Saioa Tardon - Radiative recombination coefficient in crystalline silicon above room temperature; , 2005 (OPAC)
Saioa Tardon, Gottfried Heinrich Bauer und Rudolf Brüggemann - Estimation of interface defect distribution in a-Si:H/c-Si structures; , 2005 (OPAC)
Rudolf Brüggemann - Metastable changes in the photoconductive properties of microcrystalline silicon upon heat treatment; , 2005 (OPAC)
Charles Main, J. M. Marshall und Steve Reynolds - Computer modelling of non-equilibrium multiple-trapping and hopping transport in amorphous semiconductors; , 2005 (OPAC)
Marie-Estelle Gueunier-Farret, Friedrich Huisken und Jean-Paul Kleider - Transport properties and defects in silicon nanoparticles and effect of embedding in amorphous silicon layers : abstract; , 2005 (OPAC)
Nacera Souffi, Gottfried Heinrich Bauer und Rudolf Brüggemann - Thermally stimulated currents in microcrystalline silicon : abstract; , 2005 (OPAC)
Rudolf Brüggemann und Steve Reynolds - Modulated photoluminescence studies for lifetime determination in amorphous-silicon passivated crystalline-silicon wafers : abstract; , 2005 (OPAC)