Publikationen Halbleiterphysik und Strahlungswandlung

1996 - 1998

BAU - J - SCB98
"The influence of deeply-trapped charge on the transient photocurrent response of a-Si : H solar cells",
B. Stannowski, H. Cordes, R. Brüggemann, T. Eickhoff, S. Brocheler and H. Wagner,
Journal of Non-Crystalline Solids, 227, 1295-1299 (1998).

BAU - J - CBB98
"Transient decay from the steady state in the photoconductivity of amorphous semiconductors",
H. Cordes, G. H. Bauer and R. Brüggemann,
Physical Review B, 58, 16160-16166 (1998).

BAU - J - BRR98
"Normal and inverted Meyer-Neldel rule in hot-wire CVD deposited nanocrystalline silicon",
R. Brüggemann, M. Rojahn and M. Rosch,
Physica Status Solidi a-Applied Research, 166, R11-R12 (1998).

BAU - J - BMa98
"Fermi-level effect on steady-state and transient photoconductivity in microcrystalline silicon",
R. Brüggemann and C. Main,
Physical Review B, 57, 15080-15083 (1998).

BAU - J - BHR98
"Electronic and optical properties of hot-wire-deposited microcrystalline silicon",
R. Brüggemann, A. Hierzenberger, P. Reinig, M. Rojahn, M. B. Schubert, S. Schweizer, H. N. Wanka and I. Zrinscak,
Journal of Non-Crystalline Solids, 227, 982-986 (1998).

BAU - J - BCL98
"Simulation of deep defect filling in n-type Schottky barrier structures",
R. Brüggemann, H. Cordes and K. Lips,
Journal of Non-Crystalline Solids, 227, 1173-1176 (1998).

BAU - J - BBa98
"Photoconductive properties of hydrogenated amorphous silicon in the light of the positive dangling bond as the main recombination centre - consequences from the defect pool model",
R. Brüggemann and G. H. Bauer,
Journal of Non-Crystalline Solids, 227, 197-200 (1998).

BAU - J - Bru98
"Improved steady-state photocarrier grating in nanocrystalline thin films after surface-roughness reduction by mechanical polishing",
R. Brüggemann,
Applied Physics Letters, 73, 499-501 (1998).

BAU - J - Bru97a
"Hole response time and the experimental test of the Einstein relation",
R. Brüggemann,
Physical Review B, 56, 6408-6411 (1997).

BAU - J - Bru97
"Analysis of the photoconductive decay from a trapping perspective",
R. Brüggemann,
Solid State Communications, 101, 199-203 (1997).

BAU - J - ZBR96
"The study of space charge effects by spectral response, steady state charge collection and transient photocurrents in thick a-Si:H pin-diodes",
J. H. Zollondz, R. Brüggemann, S. Reynolds, C. Main, W. Gao and G. H. Bauer,
Amorphous Silicon Technology - 1996, 420, 251-256 (1996).

BAU - J - GMR96
"Evaluation of the DICE analysis method for a-Si:H p-i-n devices",
W. Gao, C. Main, S. Reynolds, R. Brüggemann, J. H. Zollondz and R. A. G. Gibson,
Journal of Non-Crystalline Solids, 198, 1221-1225 (1996).

BAU - J - CBB96
"Electroluminescence and forward bias currents in amorphous silicon p-i-n diodes: The effect of steady state bias and large i-layer thickness",
R. Carius, F. Becker, R. Brüggemann and H. Wagner,
Journal of Non-Crystalline Solids, 200, 246-250 (1996).

BAU - J - BBa96
"Identification and explanation of peculiar features in hole SCLC-TOF in a-Si:H pin-diodes from numerical modelling",
R. Brüggemann and G. H. Bauer,
Journal of Non-Crystalline Solids, 200, 186-189 (1996).